leshan radio company, ltd. maximum ratings rating symbol value unit collector?emitter voltage v ceo ? 40 vdc collector?base voltage v cbo ? 40 vdc emitter?base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 600 madc device marking lmbt4403dw1t1g=2t electrical characteristics (t a = 2 5 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (3) v (br)ceo vdc (i c = ?1.0 madc, i b = 0) ? 40 ? collector?base breakdown voltage v (br)cbo vdc (i c = ?0.1madc, i e = 0) ? 40 ? emitter?base breakdown voltage v (br)ebo vdc (i e = ?0.1madc, i c = 0) ? 5.0 ? base cutoff current i bev adc (v ce = ?35 vdc, v eb = ?0.4 vdc) ? ? 0.1 collector cutoff current i cex adc (v ce = ?35 vdc, v eb = ?0.4 vdc) ? ? 0.1 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width < 300 s; duty cycle < 2.0%. ? compliance with rohs requirements. we declare that the material of product mount transistor dual small signal surface s-lmbt4403dw1t1g 1 3 2 sot-363/sc-88 6 4 5 e 1 b 1 e 2 c 1 b 2 c 2 q 2 q 1 1 2 3 4 5 6 ordering information device marking shipping 2t 3000/tape&reel lmbt4403dw1t1g lmbt4403dw1t3g 2t 10000/tape&reel thermal characteristics characteristic symbol max unit t ota l package dissipatio n (1) t a = 2 5 c p d 150 mw thermal resistance junction to ambient r ja 833 c/w junction and storage t emperature range t j , t stg 55 to +150 c rev.o 1/6 lmbt4403dw1t1g ? and control change requirements; aec-q101 qualified and ppap capable. s- prefix for automotive and other applications requiring unique site s-lmbt4403dw1t1g s-lmbt4403dw1t3g
leshan radio company, ltd. lmbt4403dw1t1g electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe ?? (i c = ?0.1 madc, v ce = ?1.0 vdc) 30 ?? (i c = ?1.0 madc, v ce = ?1.0 vdc) 60 ?? (i c = ?10 madc, v ce = ?1.0 vdc) 100 ?? (i c = ?150 madc, v ce = ?2.0 vdc)(3) 100 300 (i c = ?500 madc, v ce = ?2.0 vdc)(3) 20 ?? collector?emitter saturation voltage(3) v ce(sat) vdc (i c = ?150madc, i b = ?15 madc) ?? ? 0.4 (i c = ?500 madc, i b = ?50 madc) ?? ? 0.75 base?emitter saturation voltage (3) v be(sat) vdc (i c = ?150 madc, i b = ?15 madc) ? 0.75 ? 0.95 (i c = ?500 madc, i b = ?50 madc) ?? ? 1.3 small?signal characteristics current?gain ? bandwidth product f t mhz (i c = ?20madc, v ce = ?10 vdc, f = 100 mhz) 200 ?? collector?base capacitance c cb pf (v cb = ?10 vdc, i e = 0, f = 1.0 mhz) ?? 8.5 emitter?base capacitance c eb pf (v be = ?0.5 vdc, i c = 0, f = 1.0 mhz) ?? 30 input impedance h ie k (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 1.5 15 voltage feedback ratio h re x 10 ?4 (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 0.1 8.0 small?signal current gain h fe ? (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 60 500 output admittance h oe mhos (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 1.0 100 switching characteristics delay time (v cc = ? 30 vdc, v eb = ?2.0 vdc, t d ?15 rise time i c = ?150madc, i b1 = ?15 madc) t r ?20ns storage time (v cc = ?30 vdc, i c = ?150 madc, t s ? 225 ns fall time i b1 = i b2 = ?15 madc) t f ?30 figure 1. turn?on time scope rise time < 4.0ns *total shunt capacitance of test jig connectors, and oscilloscope 1.0 k ? 30 v 200 c s *< 10 pf 1.0 k ? 30 v 200 c s * < 10 pf 1n916 ?16 v ?16 v < 20 ns <2.0 ns +2.0v + 14v figure 2. turn?off time 1.0 to 100 s, duty cycle = 2% switching time equivalent test circuits 0 0 1.0 to 100 s, duty cycle = 2% +4.0 v 3. pulse test: pulse width < 300 s; duty cycle < 2.0%. rev.o 2/6 ;s-lmbt4403dw1t1g
leshan radio company, ltd. typical transient characteristics i c , collector current (ma) figure 4. charge data reverse voltage (volts) figure 3. capacitance v cc = 30 v i c / i b = 10 q t t j = 25c t j = 100c c eb c cb q a 10 20 30 50 70 100 200 300 500 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 30 20 10 7.0 5.0 3.0 2.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 capacitance (pf) t , time (ns) t r , rise time (ns) v cc = 30v i c / i b =10 t r @v cc =30v t r @v cc =10v t d @v be(off) = 2.0v t d @v be(off) = 0v i c /i b = 10 10 20 30 50 70 100 200 300 500 100 70 50 30 20 10 7.0 5.0 10 20 30 50 70 100 200 300 500 100 70 50 30 20 10 7.0 5.0 i c , collector current (ma) figure 6. rise time i c , collector current (ma) figure 5. turn?on time i c , collector current (ma) figure 7. storage time t s , rise time (ns) t s ? = t s ? 1/8 t f i b1 = i b2 10 20 30 50 70 100 200 300 500 200 100 70 50 30 20 i c /i b = 10 i c /i b = 20 q, charge (nc) rev.o 3/6 lmbt4403dw1t1g ;s-lmbt4403dw1t1g
leshan radio company, ltd. mmbt4403lt1 unit 1 mmbt4403lt1 unit 2 h re , voltage feedback ratio (x 10 ?4 ) h parameters (v ce = ?10 vdc, f = 1.0 khz, t a = 25c) this group of graphs illustrates the relationship between h fe and other ?h? parameters for this series of ransistors. to obtain these curves, a high?gain and a low?gain unit were selected from the mmbt4401lt1 lines, and the same units were used to develop the correspon dingly numbered curves on each graph. i c , collector current (madc) figure 10. current gain i c , collector current (madc) figure 12. voltage feedback ratio h fe , current gain 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 1000 700 500 300 200 100 70 50 30 20 10 5.0 2.0 1.0 0.5 0.2 0.1 i c , collector current (madc) figure 11. input impedance h ie , input impedance (k ) 100 50 20 10 5 2 1 0.5 0.2 0.1 i c , collector current (madc) figure 13. output admittance h oe , output admittance ( mhos) 500 100 50 20 10 5.0 2.0 1.0 small?signal characteristics noise figure v ce = ?10 vdc, t a = 25c bandwidth = 1.0 hz nf, noise figure (db) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 mmbt4403lt1 unit 1 mmbt4403lt1 unit 2 mmbt4403lt1 unit 1 mmbt4403lt1 unit 2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 r s , source resistance ( ) figure 9. source resistance effects nf, noise figure (db) f = 1.0 khz 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 10 8 6 4 2 0 50 100 200 500 1k 2k 5k 10k 20k 50k 10 8 6 4 2 0 f , frequency (khz) figure 8. frequency effects i c = 50 a 100 a 500 a 1.0 ma i c = 1.0 ma, r s = 430 i c = 500 a, r s = 560 i c = 50 a, r s = 2.7k i c = 100 a, r s = 1.6 k r s = optimum source resistance mmbt4403lt1 unit 1 mmbt4403lt1 unit 2 rev.o 4/6 lmbt4403dw1t1g ;s-lmbt4403dw1t1g
leshan radio company, ltd. static characteristics i c , collector current (ma) figure 14. dc current gain i b , base current (ma) figure 15. collector saturation region i c , collector current (ma) figure 16. ?on? voltages i c , collector current (ma) figure 17. temperature coefficients h fe , normalized current gain v ce , collector emitter voltage (volts) i c =1.0 ma t j = 125c v ce = 1.0 v v ce = 10 v 25c ?55c 10 ma 100ma 500ma 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.8 0.6 0.4 0.2 0 v, voltage ( volts ) coefficient (mv/ c) t j = 25c vc for v ce(sat) v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v vs for v be 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 10 0.8 0.6 0.4 0.2 0 + 0.5 0 ? 0.5 ?1.0 ?1.5 ?2.0 ? 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 rev.o 5/6 lmbt4403dw1t1g ;s-lmbt4403dw1t1g
leshan radio company, ltd. notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. inches millimeters dim min max min max a 0.071 0.087 1.80 2.20 b 0.045 0.053 1.15 1.35 c 0.031 0.043 0.80 1.10 d 0.004 0.012 0.10 0.30 g 0.026 bsc 0.65 bsc h --- 0.004 --- 0.10 j 0.004 0.010 0.10 0.25 k 0.004 0.012 0.10 0.30 n 0.008 ref 0.20 ref s 0.079 0.087 2.00 2.20 pin 1. emitter 2 2. base 2 3. collector 1 4.emitter 1 5. base 1 6.collector 2 b 0.2 (0.008) a g s h c n j k d 6 p l 6 5 4 1 2 3 - b - m m 0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm sc - 88/sot - 363 rev.o 6/6 lmbt4403dw1t1g ;s-lmbt4403dw1t1g
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